Content addressable memory cell

Details Content addressable memory cell Content addressable memory cell

2005-12-20

2005-12-20

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Associative memories

Ferroelectric cell

C365S063000, C365S189070

Reexamination Certificate

active

06977831

ABSTRACT:
One embodiment provides a content addressable memory cell having a first memory cell which is electrically connected to a comparator unit. The comparator unit is constructed from at least eight transistors, at least four transistors being arranged in a first circuit part and at least four transistors being arranged in a second circuit part and each of the circuit parts having at least two circuit branches.

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Masato Motomura, Jun Toyoura, Kazumi Hirata, Hideyuki Ooka, Hachiro Yamada and Tadayoshi Enomoto,A 1.2-Million Transistor, 33-MHz, 20-b Dictionary Search Processor(DISP)ULSI with a 160-kb CAM, IEEE Journal of Solid-State Circuits, vol. 25, No. 5, Oct. 1990, pp. 1158-1165.
International Search Report dated Sep. 18, 2003.
International Preliminary Examination Report dated Jul. 30, 2004.

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