Content addressable matrix memory cell

Details Content addressable matrix memory cell Content addressable matrix memory cell

2007-10-23

2007-10-23

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S319000, C257S391000

Reexamination Certificate

active

10926785

ABSTRACT:
A CAM memory cell integrated on a semiconductor substrate includes a plurality of floating gate memory cells, matrix-organized in rows, called word lines, and columns, called bit lines. The cells belonging to a same row and have floating gate electrodes are short-circuited with each other in order to form a single floating gate electrode for the CAM memory cell. Advantageously, the single floating gate electrode is equipped with at least a cavity manufactured in at least a side wall of the single floating gate electrode. A process for manufacturing CAM memory cells integrated on a semiconductor substrate is also described.

REFERENCES:
patent: 5515320 (1996-05-01), Miwa
patent: 6583465 (2003-06-01), Kim et al.
patent: 60-18953 (1985-01-01), None

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