Contemporaneous margin verification and memory access for...

Details Contemporaneous margin verification and memory access for... Contemporaneous margin verification and memory access for...

2008-09-19

2010-11-09

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S189070

Reexamination Certificate

active

07830701

ABSTRACT:
Circuitry and methods for restoring data values in non-volatile memory are disclosed. An integrated circuit includes a memory access circuit and a sensing circuit configured to sense a data signal during a read operation to at least one two-terminal non-volatile cross-point memory array. Each memory array includes a plurality of two-terminal memory cells. A plurality of the memory arrays can be fabricated over the substrate and vertically stacked on one another. Further, the integrated circuit can include a margin manager circuit configured to manage a read margin for the two-terminal memory cells substantially during the read operation, thereby providing for contemporaneous read and margin determination operations. Stored data read from the two-terminal memory cells may have a value of the stored data restored (e.g., re-written to the same cell or another cell) if the value is not associated with a read margin (e.g., a hard programmed or hard erased state).

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