Contamination-free selective reactive ion etching or polycrystal

Details Contamination-free selective reactive ion etching or polycrystal Contamination-free selective reactive ion etching or polycrystal

1980-03-17

1981-04-28

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 156662, 204192E, 252 791, H01L 21306

Patent

active

042644097

ABSTRACT:
Disclosed is an improved Reactive Ion Etching (RIE) technique for etching polycrystalline silicon or single crystal silicon as must be done in Very Large Scale Integration (VLSI) using silicon technology. It teaches the use of an etch gas that consists of a mixture of silicon tetrafluoride (SiF.sub.4) and chlorine (Cl.sub.2) diluted with inert gas. This etch gas allows an RIE process which combines the very desirable features of selectivity (high Si/SiO.sub.2 etch rate ratio), directionality which creates vertical sidewalls on the etched features and contains no contaminants which can cause yield problems in VLSI circuits. Vertical side walls means no mask undercutting, hence zero etch bias.

REFERENCES:
patent: 4211601 (1980-07-01), Mogab
patent: 4213818 (1980-07-01), Lemons et al.

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