Contaminant resistant barriers to prevent outgassing

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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257296, 257640, 257649, 257913, H01L 2358, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

060668938

ABSTRACT:
An integrated circuit comprises a dielectric layer disposed outwardly from a semiconductor substrate, the dielectric layer comprising at least one cavity having sidewalls extending from an outer surface of the dielectric layer inwardly toward the substrate. The integrated circuit further comprises a contaminant resistant barrier disposed outwardly from at least the sidewalls of the cavity in the dielectric layer.

REFERENCES:
patent: 4060827 (1977-11-01), Ono et al.
patent: 4658282 (1987-04-01), Matzen, Jr.
patent: 5449934 (1995-09-01), Shano et al.
patent: 5512785 (1996-04-01), Haver et al.
patent: 5866920 (1999-02-01), Matsumoto et al.

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