Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1998-09-23
2000-05-23
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257296, 257640, 257649, 257913, H01L 2358, H01L 27108, H01L 2976, H01L 2994, H01L 31119
Patent
active
060668938
ABSTRACT:
An integrated circuit comprises a dielectric layer disposed outwardly from a semiconductor substrate, the dielectric layer comprising at least one cavity having sidewalls extending from an outer surface of the dielectric layer inwardly toward the substrate. The integrated circuit further comprises a contaminant resistant barrier disposed outwardly from at least the sidewalls of the cavity in the dielectric layer.
REFERENCES:
patent: 4060827 (1977-11-01), Ono et al.
patent: 4658282 (1987-04-01), Matzen, Jr.
patent: 5449934 (1995-09-01), Shano et al.
patent: 5512785 (1996-04-01), Haver et al.
patent: 5866920 (1999-02-01), Matsumoto et al.
Brady III Wade James
Garner Jaqueline J.
Ngo Ngan V.
Telecky Jr. Frederick J.
Texas Instruments Incorporated
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