Contacts to semiconductor fin devices

Details Contacts to semiconductor fin devices Contacts to semiconductor fin devices

2007-08-28

2007-08-28

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S197000

Reexamination Certificate

active

11478916

ABSTRACT:
A method for forming a contact to a semiconductor fin which can be carried out by first providing a semiconductor fin that has a top surface, two sidewall surfaces and at least one end surface; forming an etch stop layer overlying the fin; forming a passivation layer overlying the etch stop layer; forming a contact hole in the passivation layer exposing the etch stop layer; removing the etch stop layer in the contact hole; and filling the contact hole with an electrically conductive material.

REFERENCES:
patent: 6888252 (2005-05-01), Derraa
patent: 6913960 (2005-07-01), Bryant et al.

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