Contacts to semiconductor fin devices

Details Contacts to semiconductor fin devices Contacts to semiconductor fin devices

2006-09-12

2006-09-12

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000

Reexamination Certificate

active

07105894

ABSTRACT:
A method for forming a contact to a semiconductor fin which can be carried out by first providing a semiconductor fin that has a top surface, two sidewall surfaces and at least one end surface; forming an etch stop layer overlying the fin; forming a passivation layer overlying the etch stop layer; forming a contact hole in the passivation layer exposing the etch stop layer; removing the etch stop layer in the contact hole; and filling the contact hole with an electrically conductive material.

REFERENCES:
patent: 6344392 (2002-02-01), Liaw
patent: 6413802 (2002-07-01), Hu et al.
patent: 6476437 (2002-11-01), Liaw
patent: 6762448 (2004-07-01), Lin et al.

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