Contactless uniform-tunneling separate P-well (CUSP)...

Details Contactless uniform-tunneling separate P-well (CUSP)... Contactless uniform-tunneling separate P-well (CUSP)...

2007-04-03

2007-04-03

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257SE27067, C365S185110, C365S185140

Reexamination Certificate

active

11006177

ABSTRACT:
Floating-gate field-effect transistors or memory cells formed in isolated wells are useful in the fabrication of non-volatile memory arrays and devices. A column of such floating-gate memory cells are associated with a well containing the source/drain regions for each memory cell in the column. These wells are isolated from source/drain regions of other columns of the array. Fowler-Nordheim tunneling can be used to program and erase such floating-gate memory cells either on an individual basis or on a bulk or block basis.

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