Contactless uniform-tunneling separate p-well (CUSP)...

Details Contactless uniform-tunneling separate p-well (CUSP)... Contactless uniform-tunneling separate p-well (CUSP)...

2005-08-16

2005-08-16

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S314000

Reexamination Certificate

active

06930350

ABSTRACT:
Floating-gate field-effect transistors or memory cells formed in isolated wells are useful in the fabrication of non-volatile memory arrays and devices. A column of such floating-gate memory cells are associated with a well containing the source/drain regions for each memory cell in the column. These wells are isolated from source/drain regions of other columns of the array. Fowler-Nordheim tunneling can be used to program and erase such floating-gate memory cells either on an individual basis or on a bulk or block basis.

REFERENCES:
patent: 5343423 (1994-08-01), Shimoji
patent: 5487033 (1996-01-01), Keeney et al.
patent: 5515319 (1996-05-01), Smayling et al.
patent: 5691938 (1997-11-01), Yiu et al.
patent: 5945698 (1999-08-01), Prall
patent: 5973352 (1999-10-01), Noble
patent: 5973356 (1999-10-01), Noble
patent: 6080672 (2000-06-01), Juengling
patent: 6137723 (2000-10-01), Bergemont et al.
patent: 6160277 (2000-12-01), Prall
patent: 6181601 (2001-01-01), Chi
patent: 6191444 (2001-02-01), Clampitt
patent: 6218698 (2001-04-01), Hai
patent: 6272047 (2001-08-01), Mihnea
patent: 6319774 (2001-11-01), Hai
patent: 6337244 (2002-01-01), Prall
patent: 6406959 (2002-06-01), Prall
patent: 6441428 (2002-08-01), Ghodsi
patent: 6489665 (2002-12-01), Prall
patent: 6545310 (2003-04-01), Li et al.
patent: 2002/0044483 (2002-04-01), Prall
patent: 2002/0101765 (2002-08-01), Mihnea
S. Aritome, et al. “A reliable bi-polarity write/erase technology in flash EEPROMS”, Int'l. Electron Devices Meeting, 1990,Technical Digest, Dec. 9-12, 1990; pp. 111-114.

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