Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-05
2007-06-05
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S392000, C365S104000
Reexamination Certificate
active
10509908
ABSTRACT:
A contactless Mask ROM is described, comprising a plurality of MOS-type memory cells. The memory cells include a plurality of first memory cells and a plurality of second memory cells. The first memory cells have a first channel conductivity so that they are depletion-mode MOS transistors, and the second memory cells have a second channel conductivity so that they are enhanced-mode MOS transistors. In the contactless Mask ROM, a memory cell shares two diffusions with two adjacent memory cells that are aligned with the memory cell along a first direction.
REFERENCES:
patent: 4350992 (1982-09-01), Tubbs
patent: 5600171 (1997-02-01), Makihara et al.
Lin Chin-Hsi
Liou Jhyy-Cheng
J.C. Patents
Prenty Mark V.
Solid State System Co. Ltd.
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