Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-06
2008-05-06
Dickey, Thomas (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S390000, C257SE27103, C365S185330
Reexamination Certificate
active
07368781
ABSTRACT:
A method for forming a contactless flash memory cell array is disclosed. According to an embodiment of the invention, a plurality of active regions is formed on a substrate. An insulating layer is then deposited over the active regions, and a portion of the insulating layer is removed to form a one-dimensional slot and to provide access to the active regions. A bit line is then formed in the slot in contact with the active regions.
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Blakely , Sokoloff, Taylor & Zafman LLP
Dickey Thomas
Erdem Fazli
Intel Corporation
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