Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-04-18
1993-05-18
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
365185, 257202, H01L 2968
Patent
active
052125416
ABSTRACT:
The present invention provides a 5V only, EPROM memory cell structure that is utilizable in high speed UV-erasable or flash EPROM contactless arrays and that uses source side injection for programming. The EPROM cell structure comprises spaced-apart N-type source and drain regions that define a channel region in a P-type substrate. A first layer of insulating material overlies the channel region. A polysilicon (poly 1) floating gate is formed on the first insulating layer and overlies a first portion of the channel region that extends from the drain region to a point in the channel region intermediate the source and drain regions thereby defining a second portion of the channel region that extends from the intermediate point to the source region and over which the floating gate does not extend. The poly 1 floating gate also includes a coupling portion that extends over the field oxide that defines the active device area in which the EPROM cell is formed. A second layer of insulating material is formed over the floating gate, including the coupling portion of the floating gate. A polysilicon (poly 2) control gate overlies the floating gate but is separated therefrom by the second insulating layer. The poly 2 control gate includes an access portion that overlies the second portion of the channel region but is separated therefrom by the first layer of insulating material. A polysilicon (poly 2) coupling line overlies the coupling portion of the floating gate but is separated therefrom by the second insulating layer. This cell structure is utilized in a contactless array that relies on shared source lines, resulting in very small cell size and relatively simple decoding.
REFERENCES:
patent: 4794565 (1988-12-01), Wu et al.
patent: 4967393 (1990-10-01), Yokoyama et al.
patent: 5023680 (1991-06-01), Gill et al.
patent: 5036378 (1991-07-01), Lu et al.
patent: 5060195 (1991-10-01), Gill et al.
M. Gill et al.; A 5 Volt Contactless Array 256K Bit Flash EEPROM Technology; Texas Instruments Inc.
Crane Sara W.
James Andrew J.
National Semiconductor Corporation
LandOfFree
Contactless, 5V, high speed EPROM/flash EPROM array utilizing ce does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Contactless, 5V, high speed EPROM/flash EPROM array utilizing ce, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contactless, 5V, high speed EPROM/flash EPROM array utilizing ce will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-807586