Contacted body silicon-on-insulator field effect transistor

Details Contacted body silicon-on-insulator field effect transistor Contacted body silicon-on-insulator field effect transistor

1994-09-22

1996-12-24

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257348, H01L 2701, H01L 2712

Patent

active

055876048

ABSTRACT:
Structures and methods are presented for forming a body-substrate connector for an SOI FET. The connector is formed substantially co-aligned with the gate conductor on a side of the device that does not interfere with source and drain. The body is thus held close to the substrate potential and the connector provides a path for majority carriers to quickly leave the body. By contacting the body of the SOI MOSFET device in a manner that does not perturb the charge imaged by the gate, parasitic bipolar effects are eliminated while maintaining the desirable attributes of SOI MOSFET devices, such as low substrate bias sensitivity and steep sub-threshold slope. By forming the connector substantially co-aligned with the gate conductor the connection uses little or no surface area.

REFERENCES:
patent: 4396933 (1983-08-01), Magdo et al.
patent: 4554570 (1985-11-01), Jastrzebski et al.
patent: 4814287 (1989-03-01), Takemoto et al.
patent: 5055898 (1991-10-01), Beilstein, Jr. et al.
patent: 5326991 (1994-07-01), Takasu

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