Contact switch for high frequency application

Details Contact switch for high frequency application Contact switch for high frequency application

2006-05-02

2006-05-02

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With electrical contact in hole in semiconductor

C257S621000, C257S618000

Reexamination Certificate

active

07038301

ABSTRACT:
A plurality of fixed contacts and signal lines are provided on a fixed substrate. A movable contact which is closed or opened with the fixed contacts is provided on a movable substrate opposed to the fixed substrate. A film thickness of the fixed contacts is made to be smaller than that of the signal lines so that the movable contact is set in a concave portion constituted by the fixed contacts when the fixed contacts, and the movable contact are closed and the signal lines are linearly connected.

REFERENCES:
patent: 6396372 (2002-05-01), Sakata et al.
patent: 6828888 (2004-12-01), Iwata et al.
patent: 2002/0163408 (2002-11-01), Fujii et al.
patent: 2001-14997 (2001-01-01), None
patent: WO-00/44012 (2000-07-01), None
patent: WO-02/079076 (2002-10-01), None
Patent Abstracts of Japan; Publication No. 2001-014997 dated Jan. 19, 2001 (1 pg.).
European Search Report dated Oct. 13, 2005 (3 pages).
“Fully Integrated Micromachined Capactitive Switches for RF Applications,” J.Y. Park et al.: Microwave Symposium Digest 2000 IEEE MTT-S International, Boston, MA, USA Jun. 11-16, 2000, Piscataway, NJ, USA, IEEE, U.S., vol. 1, Jun. 11, 2000, pp. 283-286 (4 pages).

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