Contact stud structure for semiconductor devices

Details Contact stud structure for semiconductor devices Contact stud structure for semiconductor devices

1989-12-18

1991-04-16

Prenty, Mark

357 71, 357 67, 357 54, H01L 2348, H01L 2946, H01L 2964, H01L 2934

Patent

active

050087304

ABSTRACT:
A method for forming contact studs to connect the substrate component devices to the overlying wiring patterns is disclosed herein. The contact studs are formed by a combination of blanket depositing an adhesive and reactive layer into the contact opening. Onto said adhesive and reactive layer is deposited a seed layer and said contact stud is completed by filling the contact opening with a third metal layer. Preferably, the adhesive and reactive layer is a transition metal and the seen and fillter layers are refractory metals.

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