Contact structure with capacitor for group III-V semiconductor d

Details Contact structure with capacitor for group III-V semiconductor d Contact structure with capacitor for group III-V semiconductor d

1994-02-02

1995-12-26

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257743, 257744, 257766, 257595, H01L 2348, H01L 2352, H01L 2940, H01L 2993

Patent

active

054790522

ABSTRACT:
A lower electrode, a first inorganic insulating film of SiN, and an organic insulating film of polyimide are formed on a GaAs substrate serving as an underlie, in this order. The organic insulating film is selectively etched to form a capacitor opening. A second norganic insulating film covering the surface of the organic insulating film and the bottom and side wall of the capacitor opening, and an upper electrode are formed. As the selective etching of the organic insulating film, wet etching may be used for simplifying manufacturing processes. Alternatively, dry etching may be used for improving etching accuracy. The organic insulating film 4 may be formed by a multi-layer film so that a circuit can be formed across multi-layers, improving the degree of integration.

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