Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2005-08-16
2005-08-16
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S148000
Reexamination Certificate
active
06930913
ABSTRACT:
The phase change memory cell is formed by a resistive element and by a memory region of a phase change material. The resistive element has a first thin portion having a first sublithographic dimension in a first direction; and the memory region has a second thin portion having a second sublithographic dimension in a second direction which is transverse to said first direction. The first and second thin portions are in direct electrical contact and define a contact area having sublithographic extent. The second thin portion is formed in a slit of sublithographic dimensions. According to a first solution, oxide spacer portions are formed in a lithographic opening, delimited by a mold layer. According to a different solution, a sacrificial region is formed on top of a mold layer and is used for forming the sublithographic slit in the mold layer.
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Pellizzer Fabio
Pirovano Agostino
Iannucci Robert
Jorgenson Lisa K.
Le Vu A.
Ovonyx Inc.
Seed IP Law Group PLLC
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