Contact structure of semiconductor memory device for reducing co

Details Contact structure of semiconductor memory device for reducing co Contact structure of semiconductor memory device for reducing co

1998-12-10

2000-06-06

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257773, 257775, 257786, H01L 2348, H01L 2352, H01L 2940

Patent

active

060722428

ABSTRACT:
A contact structure for a semiconductor memory device that reduces contact related defects and contact resistance and a method for forming the same are provided. The semiconductor memory device having an insulation layer formed on a conductive layer includes a contact formed within an opening having a bilobate shape. The contact passes through a part of the insulation layer up to the upper surface of the conductive layer from the top of the insulation layer.

REFERENCES:
patent: 4288808 (1981-09-01), Hantisch
patent: 5444020 (1995-08-01), Lee et al.
patent: 5523920 (1996-06-01), Machnga et al.

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