Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-11-13
2007-11-13
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000
Reexamination Certificate
active
10653556
ABSTRACT:
Gate lines are formed on a substrate. A gate insulating layer, an intrinsic a-Si layer, an extrinsic a-Si layer, a lower film of Cr and an upper film of Al containing metal are sequentially deposited. A photoresist having thicker first portions on wire areas and thinner second portions on channel areas is formed on the upper film. The upper film on remaining areas are wet-etched, and the lower film and the a-Si layers on the remaining areas are dry-etched along with the second portions of the photoresist. The upper film, the lower film, and the extrinsic a-Si layer on the channel areas are removed. The removal of the upper film and the lower film on the channel areas are performed by wet etching, and the first portions of the photoresist are removed after the removal of the upper film on the channel areas.
REFERENCES:
patent: 6218221 (2001-04-01), Sah
patent: 6338989 (2002-01-01), Ahn et al.
patent: 6414730 (2002-07-01), Akamatsu et al.
patent: 6424399 (2002-07-01), Shimada et al.
patent: 2001/0019126 (2001-09-01), Kim
patent: 2001/0019129 (2001-09-01), You
patent: 2002/0041347 (2002-04-01), Lee et al.
patent: 2002/0052058 (2002-05-01), Tseng
patent: 2002/0053701 (2002-05-01), Kong et al.
patent: 2002/0074549 (2002-06-01), Park et al.
patent: 2004/0238825 (2004-12-01), Lim et al.
Chinese Office Action and English Translation for Chinese Patent Application :03164805.3; Dated: Mar. 22, 2007.
Baek Bum-Gee
Choi Kwon-Young
Kang Bong-Joo
Kim Won-Joo
Kong Hyang-Shik
LandOfFree
Contact structure of semiconductor device, manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Contact structure of semiconductor device, manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact structure of semiconductor device, manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3813265