Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-11-13
2007-11-13
Hoang, Quoc (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S502000, C438S799000, C257SE21026
Reexamination Certificate
active
11029375
ABSTRACT:
A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.
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The Main Text of the Notification of the Office Action issued in copending Chinese Patent Application No. 2003101002557 with English translation.
Ito Shin'ichi
Kawano Kenji
Shiobara Eishi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Hoang Quoc
Kabushiki Kaisha Toshiba
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