Method of processing a substrate, heating apparatus, and...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S502000, C438S799000, C257SE21026

Reexamination Certificate

active

11029375

ABSTRACT:
A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.

REFERENCES:
patent: 6265696 (2001-07-01), Sakurai et al.
patent: 6301435 (2001-10-01), Ito et al.
patent: 6333493 (2001-12-01), Sakurai et al.
patent: 6376806 (2002-04-01), Yoo
patent: 6550990 (2003-04-01), Sakurai et al.
patent: 6849831 (2005-02-01), Timans et al.
patent: 6-124873 (1994-05-01), None
patent: 11-038644 (1999-02-01), None
patent: 2000-082661 (2000-03-01), None
patent: 2000-146444 (2000-05-01), None
patent: 2002-252167 (2002-09-01), None
Kawano, K. et al., “Apparatus for Processing Substrate and Method of Processing the Same,” U.S. Appl. No. 10/026,419, filed Dec. 26, 2001.
Kihara, N. et al., “Effect of Acid Evaporation in Chemically Amplified Resists on Insoluble Layer Formation,”Journal of Photopolymer Science and Technology, 8(4), 561-569, 1995.
The Main Text of the Notification of the Office Action issued in copending Chinese Patent Application No. 2003101002557 with English translation.

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