Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-06-08
2010-06-22
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S629000, C438S622000, C257SE21577
Reexamination Certificate
active
07741209
ABSTRACT:
A method for fabricating a contact of a semiconductor device includes the steps of forming a dielectric layer having a contact hole on a semiconductor substrate, forming an outgassing barrier layer comprising a poly-silicon layer to cover at least inner walls of the contact hole in order to prevent undesired outgassing from the dielectric layer, and depositing an aluminum layer on the outgassing barrier layer. The contact structure of the semiconductor device includes the aluminum layer filled in the contact layer formed on the semiconductor substrate, and the outgassing barrier layer formed under the aluminum layer to prevent outgassing from the dielectric layer. A fine contact can be formed along with the aluminum layer, thereby realizing the contact structure of a lower contact resistance. As a result, it is possible to realize stabilization of an overall contact resistance of the semiconductor device.
REFERENCES:
patent: 6955979 (2005-10-01), Akram
patent: 6955983 (2005-10-01), Yun et al.
patent: 7122437 (2006-10-01), Dyer et al.
patent: 7154159 (2006-12-01), Cheng et al.
patent: 2004/0048460 (2004-03-01), Asahina et al.
patent: 2004/0245558 (2004-12-01), Manger
patent: 10-2001-0109621 (2001-12-01), None
patent: 10-2002-0036127 (2002-05-01), None
patent: 10-2003-0001138 (2003-01-01), None
patent: 20030039387 (2003-05-01), None
Hynix / Semiconductor Inc.
Lindsay, Jr. Walter L
Marshall & Gerstein & Borun LLP
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