Contact structure of column gate and data line

Details Contact structure of column gate and data line Contact structure of column gate and data line

1997-06-05

1999-07-27

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257368, 257369, 257401, 36520301, 36520306, H01L 2976, H01L 2994

Patent

active

059294922

ABSTRACT:
An integrated circuit pattern of a sense amplifier is disclosed. The sense amplifier includes a sense circuit connected to a memory array and a column gate. The sense circuit includes N-MOSFETs cross-coupled between paired bit lines. The column gate includes an N-MOSFET for connecting the bit line to a data line and an N-MOSFET for connecting the other bit line to another data line. The N-MOSFET contained in the sense circuit and the N-MOSFET contained in the column gate are integrated in one element region. Further, the N-MOSFET contained in the sense circuit and the N-MOSFET contained in the column gate are integrated in another element region.

REFERENCES:
patent: 4949306 (1990-08-01), Nakagome et al.
patent: 5072425 (1991-12-01), Kohno et al.
patent: 5175604 (1992-12-01), Nogami
patent: 5394354 (1995-02-01), Watabe et al.
patent: 5528542 (1996-06-01), Okamura
patent: 5615615 (1997-04-01), Tanaka et al.

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