Contact structure for semiconductor device

Details Contact structure for semiconductor device Contact structure for semiconductor device

1996-02-02

1999-03-09

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257587, H01L 2941

Patent

active

058805273

ABSTRACT:
A contact structure of a semiconductor device includes an impurity-doped region formed in the semiconductor substrate, a trench having a groove in the semiconductor substrate, with the groove being in contact with at least one side face of the impurity-doped region, a conductive layer buried in the trench, and a contact region formed on at least one side face of the impurity-doped region, for connecting the impurity-doped region and the conductive layer. Thus, the area occupied by a unit cell is reduced and integration density can be increased accordingly.

REFERENCES:
patent: 4922313 (1990-05-01), Tsuchiya
patent: 4933739 (1990-06-01), Harari
patent: 4963957 (1990-10-01), Chi et al.
patent: 4980747 (1990-12-01), Hutter et al.
patent: 5003365 (1991-03-01), Havemann et al.
patent: 5077228 (1991-12-01), Eklund et al.
Silicon Processing for the VLSI Era, vol. 2, pp. 160-162 (cited on p. 2 of the specification).

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