Contact structure for improving photoresist adhesion on a dielec

Details Contact structure for improving photoresist adhesion on a dielec Contact structure for improving photoresist adhesion on a dielec

1992-01-31

1995-06-13

Mintel, William,

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257389, 257635, 257900, 257641, 257644, H01L 2934

Patent

active

054245702

ABSTRACT:
A structure is provided for improving the adhesion between a photoresist layer and a dielectric, and an integrated circuit formed according to the same. A conformal dielectric layer is formed over the integrated circuit. An interlevel dielectric layer is formed over the conformal dielectric layer. The interlevel dielectric layer is doped such that the doping concentration allows the layer to reflow while partially inhibiting the adhesion of the doped layer to photoresist at an upper surface of the doped layer. An undoped dielectric layer is formed over the doped dielectric layer. A photoresist layer is formed and patterned over the undoped dielectric layer which adheres to the undoped dielectric layer. The undoped dielectric, the interlevel dielectric and the conformal dielectric layers are etched to form an opening exposing a portion of an underlying conductive region.

REFERENCES:
patent: 3745428 (1973-07-01), Misawa et al.
patent: 3945030 (1976-03-01), Seales
patent: 4753709 (1988-06-01), Welch et al.
patent: 4818335 (1989-04-01), Karnett
patent: 5117273 (1992-05-01), Stark et al.
patent: 5151376 (1992-09-01), Spinner, III

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