Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-12-12
1997-03-25
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257384, 257639, 257649, 257755, 257766, H01L 2976, H01L 2994, H01L 31062
Patent
active
056147457
ABSTRACT:
A semiconductor device has a contact structure between two conductive layers capable of effectively preventing growth of an oxide film and diffusion of impurities between an impurity diffused region in a first one of the conductive layers and a polycrystalline silicon film (the second conductive layer) formed to be in contact with the impurity diffused region. The contact structure between the two conductive layers includes an n-type impurity diffused region 3 formed on a silicon substrate 1, an nitrided oxide film 4 formed to be in contact with the n-type impurity diffused region 3, and a polycrystalline silicon film 5a formed on the nitrided oxide film 4 and doped with impurities. Accordingly, growth of an oxide film and diffusion of impurities between the n-type impurity diffused region 3 and the polycrystalline silicon film 5a are also effectively prevented in a case where heat treatment at a high temperature is subsequently carried out in an oxygen atmosphere.
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Mitsubishi Denki & Kabushiki Kaisha
Ngo Ngan V.
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