Contact structure and method of making the same

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S637000

Reexamination Certificate

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06979640

ABSTRACT:
A method of making a semiconductor structure comprises forming a hole through a first dielectric layer; followed by forming a hole through an etch-stop layer, to expose a first conducting layer. The thickness of the etch-stop layer is at least one-half the smallest line width of the first conducting layer.

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Kirk-Othmer, 1995, “Encyclopedia of Chemical Technology”, 14:677-709.
Van Zant, Peter, 2000, “Microchip Fabrication: A Practical Guide to Semiconductor Processing”, 3thed., pp. 491-527.

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