Contact structure and manufacturing method thereof

Details Contact structure and manufacturing method thereof Contact structure and manufacturing method thereof

2006-06-20

2006-06-20

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE23145, C977S814000

Reexamination Certificate

active

07064054

ABSTRACT:
A contact structure and manufacturing method thereof is provided. A substrate having a first conductive layer and a dielectric layer thereon is provided. The dielectric layer has a contact opening that exposes a portion of the first conductive layer. A conductive nano-particle layer is formed on the exposed surface of the first conductive layer. Thereafter, a second conductive layer is formed inside the contact opening to cover the conductive nano-particle layer and form a contact structure. The conductive nano-particle layer at the bottom of the contact prevents the second conductive layer from peeling off and costs much less to produce.

REFERENCES:
patent: 6762121 (2004-07-01), Chapple-Sokol et al.

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