Contact structure and contact liner process

Details Contact structure and contact liner process Contact structure and contact liner process

2007-01-30

2007-01-30

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S621000, C257S759000, C257S760000, C257S774000

Reexamination Certificate

active

10925527

ABSTRACT:
A contact structure and a method of forming thereof for semiconductor devices or assemblies are described. The method provides process steps to create a contact structure encompassed by a sacrificial contact medium having an opening therein that is lined with a conductive spacer liner that effectively prevents the contact structure from being damaged during removal of the surrounding sacrificial contact medium material. The sacrificial contact medium is then replaced with a non-boron doped dielectric material.

REFERENCES:
patent: 6404058 (2002-06-01), Taguwa
patent: 6436762 (2002-08-01), Tzeng et al.
patent: 6518626 (2003-02-01), Moore
patent: 6555461 (2003-04-01), Woo et al.
patent: 6596583 (2003-07-01), Agarwal et al.
patent: 6680514 (2004-01-01), Geffken et al.
patent: 2003/0008417 (2003-01-01), Suzuki
patent: 2003/0137054 (2003-07-01), Ishihara
patent: 2003/0141597 (2003-07-01), Houston et al.
patent: 2004/0178504 (2004-09-01), Griffin et al.

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