Contact structure, a semiconductor device employing the...

Details Contact structure, a semiconductor device employing the... Contact structure, a semiconductor device employing the...

2009-03-27

2011-10-18

Zarneke, David (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE21209

Reexamination Certificate

active

08039829

ABSTRACT:
A contact structure that includes a first pattern formed on a substrate, wherein the first pattern has a recessed region in an upper surface thereof, a planarized buffer pattern formed on the first pattern, and a conductive pattern formed on the planarized buffer pattern.

REFERENCES:
patent: 6511862 (2003-01-01), Hudgens et al.
patent: 7105396 (2006-09-01), Hwang et al.
patent: 7394088 (2008-07-01), Lung
patent: 2006/0237756 (2006-10-01), Park et al.
patent: 2007/0249090 (2007-10-01), Philipp et al.
patent: 2009/0035514 (2009-02-01), Kang et al.
patent: 1020000038672 (2000-07-01), None
patent: 1020010016930 (2001-03-01), None
patent: 1020010083588 (2001-09-01), None
patent: 1020030052628 (2003-06-01), None
patent: 1020040038421 (2004-05-01), None
patent: 1020060091190 (2006-08-01), None
patent: 1020060110559 (2006-10-01), None
Korean Office Action issued Aug. 28, 2009 in corresponding Korean Patent Appln No. 10-2008-0029249.

Affiliated with

Also associated with

Rating

Contact structure, a semiconductor device employing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Contact structure, a semiconductor device employing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact structure, a semiconductor device employing the... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4261273