Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-14
2007-08-14
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S695000, C257SE21161, C257SE21170, C257SE21169
Reexamination Certificate
active
11002935
ABSTRACT:
The present invention provides a method for forming an interconnect on a semiconductor substrate100. The method includes forming an opening230over an inner surface of the opening130, the depositing forming a reentrant profile near a top portion of the opening130. A portion of barrier230is etched, which removes at least a portion of the barrier230to reduce the reentrant profile. The etching also removes at least a portion of the barrier230layer at the bottom of the opening130.
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Grunow Stephan
Leavy Montray
Papa Rao Satyavolu S.
Russell Noel M.
Yue Duofeng
Brady III W. James
Everhart Caridad
McLarty Peter K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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