Contact process using Y-contact etching

Details Contact process using Y-contact etching Contact process using Y-contact etching

1997-04-09

1999-09-07

Booth, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438713, 438592, H01L 214763

Patent

active

059501049

ABSTRACT:
A method is disclosed for forming Y-shaped holes in semiconductor substrates by using Y-contact etching. The hole is formed with a single, two-step dry-etching process in a single chamber with one masking step for the whole hole. The upper portion of the Y-shaped hole is formed by means of an isotropic tapered dry-etching process while the lower portion is formed by means of a straight anisotropic recipe of the same dry-etching process. The result is a Y-shaped hole formed with fewer process steps and with maximized contact area for improved reliability.

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Wofl et al., Silicon Processing for the VLSI Era: vol. 3--The Submicron MOSFET, 1995.

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