Contact process using Y-contact etching

Details Contact process using Y-contact etching Contact process using Y-contact etching

1999-08-19

2000-08-08

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

Groove

257626, H01L 3900

Patent

active

061005770

ABSTRACT:
A method is disclosed for forming Y-shaped holes in semiconductor substrates by using Y-contact etching. The hole is formed with a single, two-step dry-etching process in a single chamber with one masking step for the whole hole. The upper portion of the Y-shaped hole is formed by means of an isotropic tapered dry-etching process while the lower portion is formed by means of a straight anisotropic recipe of the same dry-etching process. The result is a Y-shaped hole formed with fewer process steps and with maximized contact area for improved reliability.

REFERENCES:
patent: 5091768 (1992-02-01), Yamazaki
patent: 5420078 (1995-05-01), Sikora
patent: 5441595 (1995-08-01), Yamagata et al.
patent: 5490901 (1996-02-01), Kim
patent: 5552343 (1996-09-01), Hsu
patent: 5684331 (1997-11-01), Jun
patent: 5852328 (1998-12-01), Nishimura et al.
patent: 5883436 (1999-03-01), Sadjadi et al.

Affiliated with

Also associated with

Rating

Contact process using Y-contact etching does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Contact process using Y-contact etching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact process using Y-contact etching will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1152699