Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-02-14
2010-06-15
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C438S149000, C257SE27116
Reexamination Certificate
active
07737445
ABSTRACT:
A method for manufacturing a semiconductor device including forming a first wire on a substrate, forming a lower film on the first wire, forming a photosensitive pattern on the lower film using a photosensitive material, forming contact holes for exposing the first wire by etching the lower film using the photosensitive film as an etching mask, removing part of the photosensitive film pattern by an ashing process to expose a borderline of the lower film defining the contact holes and forming second wire connected to the first wire via the contact holes.
REFERENCES:
patent: 5432108 (1995-07-01), Lee
patent: 5784131 (1998-07-01), Kim et al.
patent: 6001539 (1999-12-01), Lyu et al.
patent: 6088071 (2000-07-01), Yamamoto et al.
patent: 6207971 (2001-03-01), Jinno et al.
patent: 6228747 (2001-05-01), Joyner
patent: 6307611 (2001-10-01), Kim et al.
patent: 6338989 (2002-01-01), Ahn et al.
patent: 6620655 (2003-09-01), Ha et al.
patent: 6674495 (2004-01-01), Hong et al.
patent: 2001/0032981 (2001-10-01), Kong et al.
patent: 1290922 (2001-04-01), None
patent: 02028923 (1990-01-01), None
patent: 03042871 (1991-02-01), None
patent: 03265168 (1991-11-01), None
patent: 08107143 (1996-04-01), None
patent: 9-8131 (1997-01-01), None
patent: 10041519 (1998-02-01), None
patent: 10092926 (1998-04-01), None
patent: 11-153808 (1999-06-01), None
patent: 2000-183040 (2000-06-01), None
patent: 2000347173 (2000-12-01), None
patent: 2001-033826 (2001-02-01), None
patent: 2001-230321 (2001-08-01), None
patent: 8-78523 (2008-02-01), None
patent: 10-2001-0016713 (2001-03-01), None
Hong Mun-Pyo
Hong Wan-Shick
Jung Kwan-Wook
Kim Bo Sung
Kim Sang-Gab
Cantor & Colburn LLP
Samsung Electronics Co,. Ltd.
Vu David
LandOfFree
Contact portion of semiconductor device, and thin film... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Contact portion of semiconductor device, and thin film..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact portion of semiconductor device, and thin film... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4189829