Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-06-13
2006-06-13
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C438S030000
Reexamination Certificate
active
07061015
ABSTRACT:
A gate wire is formed on a substrate. Next, after forming a gate insulating film, a semiconductor layer and an ohmic contact layer subsequently are formed thereon. Next, a data wire is formed. Next, a passivation layer and an organic insulating film are deposited, and patterned to form contact holes for exposing the drain electrode, the gate pad and the data pad, respectively. Here, the organic insulating film around the contact holes is formed thinner than that in the other portions. Next, the organic insulating film around the contact holes is removed by an ashing process to expose the borderline of the passivation layer in the contact holes, thereby removing an under-cut. Then, a pixel electrode, an assistant gate pad and an assistant data pad respectively connected to the drain electrode, the gate pad and the data pad are formed.
REFERENCES:
patent: 5784131 (1998-07-01), Kim et al.
patent: 6001539 (1999-12-01), Lyu et al.
patent: 6088071 (2000-07-01), Yamamoto et al.
patent: 6228747 (2001-05-01), Joyner
patent: 6300152 (2001-10-01), Kim
patent: 6333258 (2001-12-01), Miyata et al.
patent: 6338989 (2002-01-01), Ahn et al.
patent: 2001/0032981 (2001-10-01), Kong et al.
patent: 11-153808 (1999-06-01), None
patent: 2000183040 (2000-06-01), None
patent: 1020010016713 (2001-03-01), None
Hong Mun-Pyo
Hong Wan-Shick
Jung Kwan-Wook
Kim Bo Sung
Kim Sang-Gab
Cantor & Colburn LLP
Samsung Electronics Co,. Ltd.
Vu David
LandOfFree
Contact portion of semiconductor device, and thin film... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Contact portion of semiconductor device, and thin film..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact portion of semiconductor device, and thin film... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3705009