Contact plug processing and a contact plug

Details Contact plug processing and a contact plug Contact plug processing and a contact plug

2005-12-09

2008-08-12

Luu, Chuong Anh (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S673000, C438S713000, C438S073000

Reexamination Certificate

active

07410897

ABSTRACT:
A semiconductor device has anisotropically formed via holes through a PMD layer. The anisotropic geometry of the via holes results in the diameter of a via hole over a gate structure being equal to the diameter of a via hole not over the gate structure. The via holes are formed by depositing a silicon layer and an antireflective layer over the PMD layer. The silicon layer and the antireflective layer are etched to have holes with a regular taper. The holes through the PMD are anisotropically etched so as to have straight walls.

REFERENCES:
patent: 4888087 (1989-12-01), Moslehi et al.
patent: 5732009 (1998-03-01), Tadaki et al.
patent: 6649517 (2003-11-01), Teh et al.

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