Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1995-11-21
1999-01-05
Baxter, Janet
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430 5, 430326, 430329, 430330, G03C 500
Patent
active
058560670
ABSTRACT:
The present invention concerns a contact photolithographic process for realizing submicrometer metal lines, in particular lines for devices such as FETs, MESFETs and ICs, with width different from the pattern width on the masks, through contact photolithographic techniques. In particular through this technique it is possible to realize metal lines having width smaller than 0.5 .mu.m. By varying the reversal photoresist exposure energy it is possible to control the dimension of the line to be realized. Using an exposure energy lower than the one normally used, lines having width smaller than the width of the corresponding tracks on the mask are obtained and vice versa, with an exposure energy higher than the one normally used, lines having width greater than the corresponding tracks on the mask are obtained.
REFERENCES:
patent: 5178986 (1993-01-01), Zampini et al.
patent: 5178989 (1993-01-01), Zampini et al.
patent: 5242770 (1993-09-01), Chen et al.
Mack, C.A. "Understanding focus effects in submicrometer optical lithography: a review", Opt. Eng. Oct. 1983 vol. 32, No. 10, pp. 2350-2362.
"Image Reversal Photoresist," by Eric Alling et al., Solid State Technology, vol. 31, No. 6, Jun. 1988, pp. 37-38.
"Patent Abstracts of Japan" Application #01083237, Suzuki et al. Resist Patern Forming Method, Oct. 24, 1990.
"Image Reversal Lift-Off Process," IBM Technical Disclosure Bulletin, Mar. 1982.
"Patent Abstracts of Japan," Application No. 58015705, Tanaka et al., Formation of Fine Pattern, Aug. 13, 1984.
"Lift-Off Fabric of Fine Cu Patterns with a High Aspect Ratio," Yuitoo et al., Electronics and Communications in Japan, Part 2 vol. 74, No. 8, 1991, pp. 79-87.
Crippa Osvaldo
Gabbrielli Barbara
Alcatel Italia S.P.A.
Ashton Rosemary
Baxter Janet
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