Contact opening metrology

Details Contact opening metrology Contact opening metrology

2007-10-09

2007-10-09

Vanore, David (Department: 2881)

Radiant energy

Irradiation of objects or material

C250S310000, C250S492220

Reexamination Certificate

active

11181659

ABSTRACT:
A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

REFERENCES:
patent: 4578279 (1986-03-01), Zingher
patent: 4902964 (1990-02-01), Lee
patent: 5150185 (1992-09-01), Yamada
patent: 5637186 (1997-06-01), Liu et al.
patent: 5736863 (1998-04-01), Liu
patent: 5897710 (1999-04-01), Sato et al.
patent: 5903011 (1999-05-01), Hatanaka
patent: 6232787 (2001-05-01), Lo et al.
patent: 6235634 (2001-05-01), White et al.
patent: 6236222 (2001-05-01), Sur, Jr. et al.
patent: 6407386 (2002-06-01), Dotan et al.
patent: 6410353 (2002-06-01), Tsai
patent: 6559662 (2003-05-01), Yamada et al.
patent: 6614244 (2003-09-01), Yamada et al.
patent: 6768324 (2004-07-01), Yamada et al.
patent: 6897440 (2005-05-01), Yamada
patent: 7038224 (2006-05-01), Kadyshevitch et al.
patent: 2001/0022345 (2001-09-01), Isimoto
patent: 2002/0070738 (2002-06-01), Yamada
patent: 2002/0093350 (2002-07-01), Yamada
patent: 2002/0134936 (2002-09-01), Miyako et al.
patent: 2003/0104639 (2003-06-01), Kikuchi et al.
patent: 11087451 (1999-03-01), None
patent: 2000174077 (2000-06-01), None
patent: 144155 (2001-05-01), None
patent: 2001338956 (2001-07-01), None
patent: 2002083849 (2002-03-01), None
patent: 2002231780 (2002-08-01), None
patent: WO 0180304 (2001-10-01), None
patent: WO 03067653 (2003-08-01), None
International Search Report and Written Opinion for PCT/US2004/014450, Sep. 28, 2004.
Yacobi et al., “Microanalysis of Solids”, 1994 Plenum Press, New York, Chapters 1, 2 & 4.
Model EKF-1000 Omnicron Nanotechnology GmbH, Taunusstein, Germany, Available at http://www.omnicron.de/products/ekf1000, 2002.
Yacobi et al., “Scanning Electron Microscopy (Chaper 2)”, Microanalysis of Solids, Plenum Press, New York, 1994.
Yamada, Keizo, In-Line Contact and Via Hole Monitoring Method Used Electron-Beam-Induced Substrate Current (EB Scope), NEC Research and Development, Nippon Electric Ltd., Tokyo, Japan, vol. 41, No. 4, Oct. 2000, pp. 336-340, XP000967723, ISSN: 0547-051X.
Invitation to Pay Additional Fees, International Patent Application No. PCT/US03/03494, Applied Materials, Inc., Aug. 19, 2003.
International Search Report, International Patent Application No. PCT/US03/03494, Applied Materials, Inc., Nov. 28, 2003.
Written Opinion, International Patent Application No. PCT/US03/03494, Applied Materials, Inc., Applied Materials, Inc., Jan. 27, 2005.
International Preliminary Examination Report, International Patent Application No. PCT/US03/03494, Applied Materials, Inc., Aug. 19, 2003.
Yamada et al, :An In-Line Contact and Via Hole Inspection Method Using Electron Beam Compensation Current, IEEE, 1999.

Affiliated with

Also associated with

Rating

Contact opening metrology does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Contact opening metrology, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact opening metrology will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3862496