Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-10-31
1998-06-02
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 58, 257 59, 257 60, 257 61, 257 72, H01L 2904, H01L 31036, H01L 310376, H01L 3120
Patent
active
057604207
ABSTRACT:
The effect of a TFT having a Ge--Si contact layer is that a stable etching of the contact layer, without excessive etching of the semiconductor layer can be made due to a good selectivity when etching. Consequently, a uniform channel after a backetch step is obtained and the device performance can be improved.
REFERENCES:
patent: 5099790 (1992-03-01), Kawakami
patent: 5308778 (1994-05-01), Fitch et al.
patent: 5627088 (1997-05-01), Fukaya et al.
Mintel William
Samsung Electronics Co,. Ltd.
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