Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1996-11-18
1998-07-14
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257443, 257223, 257229, H01L 310232
Patent
active
057809143
ABSTRACT:
A contact image sensor whose sensory elements have similar output levels is disclosed. The sensor includes: a first region consisting of a plurality of light sensory elements situated on a silicon wafer, the light sensory elements being separated from one another by an isolation material; an implanted region formed in the silicon wafer under the first region for preventing carrier from affecting the silicon wafer; a plurality of circuitry regions formed on a portion of the silicon wafer excluding the first region, the circuitry regions being separated from one another; and a light shielding region formed on the silicon wafer between the first region and the plurality of circuitry regions.
REFERENCES:
patent: 4841348 (1989-06-01), Shizukuishi et al.
patent: 5276349 (1994-01-01), Takahara
Samsung Electronics Co,. Ltd.
Tran Minh-Loan
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