Contact hole structure in a semiconductor and formation method t

Details Contact hole structure in a semiconductor and formation method t Contact hole structure in a semiconductor and formation method t

1995-06-07

1999-10-26

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438629, 438632, 438648, 438656, 438688, H01L 2128

Patent

active

059727861

ABSTRACT:
A process for forming wiring over a migration preventing layer on a semiconductor substrate including forming a contact hole in a an insulation layer of the substrate and then filling the contact hole with an aluminum based alloy. A migration preventing layer is then formed, of a material which resists migration of atoms of the aluminum based alloy, over the surface of the aluminum based alloy. A wiring layer of aluminum is then formed over the migration preventing layer. In another embodiment, the contact hole may be provided with a first layer to prevent electron migration and a second layer which is a nitride of the first layer material.

REFERENCES:
patent: 4924295 (1990-05-01), Kuecher
patent: 4977440 (1990-12-01), Stevens
patent: 5036382 (1991-07-01), Yamaha
patent: 5106781 (1992-04-01), Penning De Vries
patent: 5108951 (1992-04-01), Chen et al.
patent: 5312772 (1994-05-01), Yokoyama et al.
patent: 5472912 (1995-12-01), Miller
IBM Technical Disclosure Bulletin, vol. 29, No. 11, Apr. 1987, Refractory Contact Stud, pp. 5091-5092.

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