Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1993-02-16
1999-11-02
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430317, 438706, G03F 736
Patent
active
059767669
ABSTRACT:
A contact hole forming method uses a negative resist film having an absorptivity of 0.5 .mu.m.sup.-1 or above to suppress standing-wave effect in forming contact holes in a silicon dioxide film or the like underlying the negative resist film by anisotropic etching. The contact hole forming method comprises steps of: applying a negative resist having an absorptivity of 0.5 .mu.m.sup.-1 or above to the stepped surface of a stepped film formed on a substrate to form a negative resist film having a flat surface; exposing the negative resist film through a photomask to laser light emitted by a krypton fluoride excimer laser; developing the exposed negative resist film; and etching the silicon dioxide film or the like by anisotropic etching using the developed negative resist film as an etching mask and an etching gas containing a fluorocarbon or a mixture of a fluorocarbon and hydrogen to form contact holes. The negative resist film suppresses standing-wave effect, so that the contact holes can be formed in diameters accurately corresponding to the diameters of corresponding patterns of the photomask.
REFERENCES:
patent: 4978419 (1990-12-01), Nanda
patent: 5230985 (1993-07-01), Lohaus
patent: 5310624 (1994-05-01), Ehrlich
CRC Handbook of Chemistry and Physics, 56.sup.th ed. (1976), Robert C. Weast, Ph.D., p. F-87
Kasuga Takashi
Tomo Yoichi
Duda Kathleen
Kananen Ronald P.
Sony Corporation
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