Contact-forming method

Details Contact-forming method Contact-forming method

2005-07-12

2005-07-12

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S642000, C438S672000, C438S675000

Reexamination Certificate

active

06916734

ABSTRACT:
A semiconductor device has a lower metal layer, a lower dielectric layer on top of the lower metal layer, an upper metal layer on top of the lower dielectric layer, an upper dielectric layer on top of the upper metal layer, and a contact region formed as a cavity that extends through the upper dielectric layer, the upper metal layer and the lower dielectric layer for access to a solder pad portion of the lower metal layer. A dielectric lining layer lines a peripheral cavity-confining surface of the cavity, and is transverse to a plane of the lower metal layer. The dielectric lining layer isolates the upper metal layer from the lower metal layer while permitting access to the solder pad portion of the lower metal layer. An electrical contact fills the cavity, and enables external electrical connection with the lower metal layer.

REFERENCES:
patent: 5843843 (1998-12-01), Lee et al.

Affiliated with

Also associated with

Rating

Contact-forming method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Contact-forming method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact-forming method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3382404