Contact formation

Details Contact formation Contact formation

2010-05-26

2011-10-11

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S612000, C257SE21627

Reexamination Certificate

active

08034706

ABSTRACT:
The present disclosure includes various method of contact embodiments. One such method embodiment includes creating a trench in an insulator stack material of a particular thickness and having a portion of the trench positioned between two of a number of gates. This method includes depositing a filler material in the trench and etching the filler material to a particular depth that is less than the particular thickness of the insulator stack material. This method also includes depositing a spacer material to at least one side surface of the trench to the particular depth of the filler material and depositing a conductive material into the trench over the filler material.

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