Contact etch method

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156644, 156646, 156653, 156657, 1566611, 156668, 156904, 252 791, 427 431, 430312, 430313, 430317, B44C 122, B29C 3700, C03C 1500, C03C 2506

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active

047583053

ABSTRACT:
A method for patterning small-geometry contacts with sloped sidewalls in integrated circuit fabrication. A multilayer resist process is used, and the spacer layer is undercut by overexposure and overdevelopment at the pattern transfer stage. This provides a cantilever etch mask structure, without the need to use any hardmask layers.

REFERENCES:
patent: 4484978 (1984-11-01), Keyser
patent: 4508591 (1985-04-01), Bartlett et al.
patent: 4522681 (1985-06-01), Gorowitz
patent: 4523976 (1985-06-01), Bukhman
patent: 4557797 (1985-12-01), Fuller et al.
Lin et al., Some Aspects of Anti-Reflective Coating for Optical Lithography, SPIE vol. 469, Advances in Resist Tech. (1984), pp. 30-34, 36 and 37.
Lin et al., Use of Anti-Reflective Coating in Bilayer Resist Process, 1983, International Symposium on Electron, Ion and Photon Beams, May 31-Jun 3, 1983.
Saia et al., Dry Etching of Tapered Contact Holes using Multilayer Resist, J. Electrochem, Soc. Solid-State Science & Tech. Aug. 1985, pp. 1954-1957, vol. 132, No. 8.
Reynolds et al., Studies of Plasma Etching Mechanisms with Cantilever, Electronics Research Lab., University of California, pp. 61-74.
Bonifield et al., Sloped Contact Ething, Plasma Seminar Proceedings 1985, pp 25-29.
Rothman et al., Process for Forming Tapered Vias In SiO.sub.2 by Reactive ION Etching, IBM Data Systems Division, pp. 193-198.

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