Contact doping and annealing systems and processes for...

Details Contact doping and annealing systems and processes for... Contact doping and annealing systems and processes for...

2005-11-10

2009-08-04

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S799000, C257SE21471, C257SE21475, C977S901000, C977S963000

Reexamination Certificate

active

07569503

ABSTRACT:
Embodiments of the present invention are provided for improved contact doping and annealing systems and processes. In embodiments, a plasma ion immersion implantation (PIII) process is used for contact doping of nanowires and other nanoelement based thin film devices. According to further embodiments of the present invention, pulsed laser annealing using laser energy at relatively low laser fluences below about 100 mJ/cm2(e.g., less than about 50 mJ/cm2, e.g., between about 2 and 18 mJ/cm2) is used to anneal nanowire and other nanoelement-based devices on substrates, such as low temperature flexible substrates, e.g., plastic substrates.

REFERENCES:
patent: 4949348 (1990-08-01), Nguyen et al.
patent: 4988879 (1991-01-01), Zare et al.
patent: 5731046 (1998-03-01), Mistry et al.
patent: 5920078 (1999-07-01), Frey
patent: 5962863 (1999-10-01), Russell et al.
patent: 6256767 (2001-07-01), Kuekes et al.
patent: 6274007 (2001-08-01), Smirnov et al.
patent: 6438025 (2002-08-01), Skarupo
patent: 6447663 (2002-09-01), Lee et al.
patent: 6458430 (2002-10-01), Bernstein et al.
patent: 6465813 (2002-10-01), Ihm
patent: 6489589 (2002-12-01), Alexander
patent: 6566704 (2003-05-01), Choi et al.
patent: 6586785 (2003-07-01), Flagan et al.
patent: 6672925 (2004-01-01), Talin et al.
patent: 6706566 (2004-03-01), Avouris et al.
patent: 6760245 (2004-07-01), Eaton et al.
patent: 6790425 (2004-09-01), Smalley et al.
patent: 6798000 (2004-09-01), Luyken et al.
patent: 6815218 (2004-11-01), Jacobson et al.
patent: 6872645 (2005-03-01), Duan et al.
patent: 6878417 (2005-04-01), Polanyi et al.
patent: 6882051 (2005-04-01), Majumdar et al.
patent: 6903717 (2005-06-01), Takahashi et al.
patent: 2002/0117659 (2002-08-01), Lieber et al.
patent: 2002/0127495 (2002-09-01), Scherer
patent: 2002/0130311 (2002-09-01), Lieber et al.
patent: 2002/0130353 (2002-09-01), Lieber et al.
patent: 2002/0163079 (2002-11-01), Awano
patent: 2002/0173083 (2002-11-01), Avouris et al.
patent: 2002/0175408 (2002-11-01), Majumdar et al.
patent: 2003/0012723 (2003-01-01), Clarke
patent: 2003/0042562 (2003-03-01), Giebeler et al.
patent: 2003/0089899 (2003-05-01), Lieber et al.
patent: 2003/0186522 (2003-10-01), Duan et al.
patent: 2003/0189202 (2003-10-01), Li et al.
patent: 2003/0226820 (2003-12-01), Khang
patent: 2004/0005258 (2004-01-01), Fonash et al.
patent: 2004/0031975 (2004-02-01), Kern et al.
patent: 2004/0036126 (2004-02-01), Chau et al.
patent: 2004/0036128 (2004-02-01), Zhang et al.
patent: 2004/0061422 (2004-04-01), Avouris et al.
patent: 2004/0079195 (2004-04-01), Perry et al.
patent: 2004/0147070 (2004-07-01), Lei et al.
patent: 2004/0213307 (2004-10-01), Lieber et al.
patent: 2004/0238887 (2004-12-01), Nihey
patent: 2005/0064618 (2005-03-01), Brown et al.
patent: 2005/0079659 (2005-04-01), Duan et al.
patent: 2005/0224360 (2005-10-01), Varghese et al.
patent: 2006/0008942 (2006-01-01), Romano et al.
patent: 2006/0009003 (2006-01-01), Romano et al.
patent: 2006/0063361 (2006-03-01), Kumar et al.
patent: 2007/0119546 (2007-05-01), Collins et al.
patent: 2008/0132041 (2008-06-01), Yamazaki et al.
patent: 2008/0176349 (2008-07-01), Suh et al.
patent: WO-0103208 (2001-01-01), None
patent: WO-0217362 (2002-02-01), None
patent: WO-0248701 (2002-06-01), None
Chung, S-W et al., “Silicon nanowire devices” Am. Inst. Phys. (2000) 76(15):2068-2070.
Duan, X. et al., “High performance thin-film transistors using semiconductor nanowires and nanoribbons” Nature (2003) 425:274-278.
Tans, S.J. et al., “Room-temperature transistor based on a single carbon nanotube” Nature (1998) 393:49-52.
Yamada, T. “Analysis of submicron carbon nanotube field-effect transistors” Appl. Phys Letts (2000) 76(5):628-630.

Affiliated with

Also associated with

Rating

Contact doping and annealing systems and processes for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Contact doping and annealing systems and processes for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact doping and annealing systems and processes for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4121729