Contact chain structure for troubleshooting EPROM memory circuit

Details Contact chain structure for troubleshooting EPROM memory circuit Contact chain structure for troubleshooting EPROM memory circuit

1991-10-22

1992-11-17

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

H01L 2978, H01L 2166

Patent

active

051650665

ABSTRACT:
A contact chain structure, for troubleshooting integrated circuits of EPROM memories, of a type comprising cluster contacts connecting metallization layers to active areas of the circuit, comprises a source-drain region implanted centrally of each active area. Deposited over that region is a gate region which, on being biased, enables the conductive condition of the chain to be varied.

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patent: 4017888 (1977-04-01), Christie et al.
patent: 4145701 (1979-03-01), Kawagoe
patent: 4212025 (1980-07-01), Hirasawa et al.
patent: 4276095 (1981-06-01), Beilstein, Jr. et al.
patent: 4830974 (1989-05-01), Chang et al.
patent: 4851361 (1989-07-01), Schumann et al.
patent: 4859619 (1989-08-01), Wu et al.

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