Contact barrier layer deposition process

Details Contact barrier layer deposition process Contact barrier layer deposition process

2007-12-04

2010-12-07

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S625000, C438S656000, C257SE21584

Reexamination Certificate

active

07846835

ABSTRACT:
A method for depositing a barrier layer onto a substrate is disclosed. A layer of titanium (Ti) is deposited onto the substrate using an ionized metal plasma (IMP) physical vapor deposition process. The IMP process includes: generating gaseous ions, accelerating the gaseous ions towards a titanium target, sputtering the titanium atoms from the titanium target with the gaseous ions, ionizing the titanium atoms using a plasma, and depositing the ionized titanium atoms onto the substrate to form the layer of Ti. A first layer of titanium nitride (TiN) is deposited onto the layer of Ti using a metal organic chemical vapor deposition (MOCVD) process. A second layer of TiN is deposited onto the first layer of TiN using a thermal chemical vapor deposition process. The newly completed barrier layer is annealed in the presence of nitrogen at a temperature of between about 500° C. to about 750° C.

REFERENCES:
patent: 6271592 (2001-08-01), Kim et al.
patent: 6297555 (2001-10-01), Zhao et al.
patent: 2007/0080459 (2007-04-01), Seok
patent: 2008/0132060 (2008-06-01), Luoh et al.

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