Constant voltage diode having a reduced leakage current and a hi

Details Constant voltage diode having a reduced leakage current and a hi Constant voltage diode having a reduced leakage current and a hi

1993-03-10

1995-08-15

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257337, 257133, 257146, 257577, H01L 2702

Patent

active

054422205

ABSTRACT:
A semiconductor device functioning as a diode, includes an insulated-gate field effect transistor for determining a breakdown voltage, and a bipolar transistor connected to the field effect transistor for amplifying a drain current of the field effect transistor. The field effect transistor and the bipolar transistor are formed in the same semiconductor substrate.

REFERENCES:
patent: 4825274 (1989-04-01), Higuchi et al.

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