Optics: measuring and testing – Dimension – Width or diameter
Reexamination Certificate
2006-11-07
2008-08-26
Nguyen, Sang (Department: 2886)
Optics: measuring and testing
Dimension
Width or diameter
C356S237500, C356S394000, C702S155000, C438S016000
Reexamination Certificate
active
07417750
ABSTRACT:
Structures formed on a semiconductor wafer are consecutively measured by obtaining first and second measured diffraction signals of a first structure and a second structure formed abutting the first structure. The first and second measured diffraction signals were consecutively measured using an angle-resolved spectroscopic scatterometer. The first measured diffraction signal is compared to a first simulated diffraction signal generated using a profile model of the first structure. The profile model has profile parameters, characterize geometries of the first structure, and an azimuth angle parameter, which define the angle between the plane of incidence beam and direction of periodicity of the first or second structure. One or more features of the first structure are determined based on the comparison. The second measured diffraction signal is compared to a second simulated diffraction signal generated using the same profile model as the first simulated diffraction signal with the azimuth angle parameter having a value that is about 90 degrees different than the value of the azimuth angle parameter used to generate the first simulated diffraction signal. One or more features of the second structure are determined based on the comparison of the second measured diffraction signal to the second simulated diffraction signal.
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Bao Junwei
Madriaga Manuel
Vuong Vi
Morrison & Foerster / LLP
Nguyen Sang
Tokyo Electron Limited
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