Connection structure for SOI devices

Details Connection structure for SOI devices Connection structure for SOI devices

2007-03-06

2007-03-06

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257S344000, C257S412000, C257S413000, C257SE27098, C257SE21661

Reexamination Certificate

active

10815201

ABSTRACT:
A semiconductor contact connection structure and the method for forming the same are disclosed. The connection structure has a first semiconductor device formed on an insulator substrate. A non-conducting gate interconnect layer is formed on the insulator substrate for connecting to a gate of a second semiconductor device, and a silicide layer formed on the gate interconnect layer and an active region of the first semiconductor device for making a connection thereof.

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